BFR181WH6327XTSA1
For Reference Only
Part Number | BFR181WH6327XTSA1 |
PNEDA Part # | BFR181WH6327XTSA1 |
Description | RF TRANS NPN 12V 8GHZ SOT323-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 337,194 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR181WH6327XTSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | BFR181WH6327XTSA1 |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BFR181WH6327XTSA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
Gain | 19dB |
Power - Max | 175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
Current - Collector (Ic) (Max) | 20mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
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Microsemi Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |