BFR106E6327HTSA1
For Reference Only
| Part Number | BFR106E6327HTSA1 |
| PNEDA Part # | BFR106E6327HTSA1 |
| Description | RF TRANS NPN 15V 5GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 209,556 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR106E6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR106E6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFR106E6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz |
| Gain | 8.5dB ~ 13dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 210mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 2.8V Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz Gain - Power - Max 220mW DC Current Gain (hFE) (Min) @ Ic, Vce 155 @ 10mA, 2V Current - Collector (Ic) (Max) 70mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package 4-DFP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 38 @ 7mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 11.5dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) - Gain 7dB ~ 8.2dB Power - Max 220W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V Current - Collector (Ic) (Max) 8A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55AW Supplier Device Package 55AW |
