Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 123/2164

Part Number	Description	In Stock
BFS17PE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.4GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock683,124
BFS 17P E6433 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.4GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,748
BFS17PE6752HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN SOT23-3 Manufacturer: Infineon Technologies Series: * Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,394
BFS 17P E8211 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN SOT23-3 Manufacturer: Infineon Technologies Series: * Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,402
BFS17SE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2NPN 15V 1.4GHZ SOT363 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock3,348
BFS17SH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2NPN 15V 1.4GHZ SOT363 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock5,994
BFS17TA Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.3GHZ SOT23-3 Manufacturer: Diodes Incorporated Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock3,780
BFS17W,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.6GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock8,046
BFS17W,135 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.6GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock7,884
BFS17WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.4GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock5,544
BFS17WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.4GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock160,038
BFS17WH6393XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN SOT323-3 Manufacturer: Infineon Technologies Series: * Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,510
BFS25A,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 5GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Gain: - Power - Max: 32mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock4,950
BFS 360L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 9V 14GHZ TSLP-6-1 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock5,760
BFS 380L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 9V 14GHZ TSLP-6-1 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz Gain: 8dB ~ 12dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock8,226
BFS 386L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 6V 14GHZ TSLP-6-1 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 210mW, 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V Current - Collector (Ic) (Max): 35mA, 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock7,974
BFS 460L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2NPN 5.8V 22GHZ TSLP-6 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock7,596
BFS 466L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 5V/9V 14GHZ TSLP Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5V, 9V Frequency - Transition: 22GHz, 14GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Gain: 12dB ~ 17dB Power - Max: 200mW, 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V Current - Collector (Ic) (Max): 50mA, 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock3,654
BFS 469L6 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 5V/10V 9GHZ TSLP Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5V, 10V Frequency - Transition: 22GHz, 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Gain: 14.5dB Power - Max: 200mW, 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V Current - Collector (Ic) (Max): 50mA, 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-1	In Stock4,536
BFS 481 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 8GHZ SOT363-6 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock5,526
BFS481H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 8GHZ SOT363-6 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: P-SOT363-6	In Stock47,904
BFS 483 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 8GHZ SOT363-6 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock8,118
BFS483H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 8GHZ SOT363-6 Manufacturer: Infineon Technologies Series: - Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock50,664
BFS505,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock2,250
BFS520,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock7,056
BFS520,135 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock7,686
BFS540,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock2,466
BFT25,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 2.3GHZ TO236AB Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): 5.5dB @ 500MHz Gain: - Power - Max: 30mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	In Stock28,578
BFT25A,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 5GHZ TO236AB Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Gain: - Power - Max: 32mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	In Stock282,618
BFT92,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS PNP 15V 5GHZ TO236AB Manufacturer: NXP USA Inc. Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	In Stock7,416

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