2N5109
For Reference Only
| Part Number | 2N5109 |
| PNEDA Part # | 2N5109_5E |
| Description | RF TRANS NPN 20V 1.2GHZ TO39 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,960 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5109 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N5109 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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2N5109 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 12dB |
| Power - Max | 2.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Current - Collector (Ic) (Max) | 400mA |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 30GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz Gain 20dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 3.5V Current - Collector (Ic) (Max) 80mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, Flat Leads Supplier Device Package 4-TSFP |
Manufacturer STMicroelectronics Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 16V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 5.8dB Power - Max 117W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V Current - Collector (Ic) (Max) 8A Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case M111 Supplier Device Package M111 |
Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz Gain 9dB ~ 11dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 2.7V Current - Collector (Ic) (Max) 16mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) 5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
