2N3663
For Reference Only
| Part Number | 2N3663 |
| PNEDA Part # | 2N3663 |
| Description | RF TRANS NPN 12V 2.1GHZ TO92-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,346 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N3663 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N3663 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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2N3663 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 2.1GHz |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
| Gain | 1.5dB |
| Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 470MHz ~ 860MHz Noise Figure (dB Typ @ f) - Gain 8.5dB Power - Max 65W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 20V Current - Collector (Ic) (Max) 5.2A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M156 Supplier Device Package M156 |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
