SPB08P06PGATMA1
For Reference Only
Part Number | SPB08P06PGATMA1 |
PNEDA Part # | SPB08P06PGATMA1 |
Description | MOSFET P-CH 60V 8.8A TO-263 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,700 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPB08P06PGATMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | SPB08P06PGATMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPB08P06PGATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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