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SPB08P06PGATMA1

SPB08P06PGATMA1

For Reference Only

Part Number SPB08P06PGATMA1
PNEDA Part # SPB08P06PGATMA1
Description MOSFET P-CH 60V 8.8A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB08P06PGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB08P06PGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPB08P06PGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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