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ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

For Reference Only

Part Number ISP25DP06NMXTSA1
PNEDA Part # ISP25DP06NMXTSA1
Description MOSFET P-CH 60V SOT223-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ISP25DP06NMXTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberISP25DP06NMXTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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ISP25DP06NMXTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 30V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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