Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 64/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 80V 82A 8TDSON |
4,482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 82A (Tc) | 6V, 10V | 6.1mOhm @ 41A, 10V | 3.8V @ 41µA | 33nC @ 10V | ±20V | 2500pF @ 40V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 67A TO252-3 |
6,426 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH <= 40V |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2.3V @ 250µA | 67nC @ 4.5V | ±20V | 4600pF @ 20V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 4VSON |
6,588 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 59W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET_(20V 40V) |
3,330 |
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Automotive, AEC-Q101, OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 7V, 10V | 1mOhm @ 100A, 10V | 3.4V @ 100µA | 132nC @ 10V | ±20V | 7650pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 45A TO220-FP |
7,650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 45A (Tc) | 6V, 10V | 8.6mOhm @ 45A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 4VSON |
5,076 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 125mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 111W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 13A TO220 |
5,868 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 166A TO263-7 |
5,454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 166A (Tc) | 6V, 10V | 3.2mOhm @ 83A, 10V | 3.8V @ 125µA | 95nC @ 10V | ±20V | 6970pF @ 50V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
HIGH POWER_LEGACY |
2,700 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
HIGH POWER_NEW |
5,346 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | ±20V | 1503pF @ 400V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO247 |
7,632 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MV POWER MOS |
7,578 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MV POWER MOS |
6,066 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | - | - |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
7,776 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3nC @ 18V | +23V, -7V | 182pF @ 800V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
4,986 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 4.7A (Tc) | 15V, 18V | 350mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3nC @ 18V | +23V, -7V | 182pF @ 800V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
3,042 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5nC @ 18V | +23V, -7V | 289pF @ 800V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
6,822 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 13A (Tc) | 15V, 18V | 220mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5nC @ 18V | +23V, -7V | 289pF @ 800V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
7,452 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13nC @ 18V | +23V, -7V | 454pF @ 800V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
8,946 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13nC @ 18V | +23V, -7V | 454pF @ 800V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,394 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21nC @ 18V | +23V, -7V | 707pF @ 800V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
IC GAN FET 600V 60A 8SON |
3,690 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,322 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21nC @ 18V | +23V, -7V | 707pF @ 800V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
4,806 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31nC @ 18V | +23V, -7V | 1.06nF @ 800V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
5,760 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31nC @ 18V | +23V, -7V | 1.06nF @ 800V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,790 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63nC @ 18V | +23V, -7V | 2.12nF @ 800V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,844 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63nC @ 18V | +23V, -7V | 2.12nF @ 800V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
4,536 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323 |
7,200 |
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* | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 540MA SOT23 |
8,190 |
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* | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |