Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 48/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 600V 30A TO263 |
5,976 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | ±20V | 2127pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
6,948 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
3,780 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 375A DIRECTFET |
6,570 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5660pF @ 25V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 150V 105A TO263-3 |
4,752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 8.3mOhm @ 100A, 10V | 4.9V @ 134µA | 45nC @ 10V | ±20V | 210pF @ 75V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V DIRECTFET L8 |
2,646 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 650V 22A TO263-3 |
8,352 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3 |
4,230 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CH 120V 120A TO263-3 |
6,750 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 545A AUTO |
8,874 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 57A (Ta), 545A (Tc) | 10V | 0.6mOhm @ 195A, 10V | 3.9V @ 250µA | 562nC @ 10V | 40V | 17890pF @ 25V | - | 3.8W (Ta), 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
|
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Infineon Technologies |
MOSFET N-CH TO263-7 |
3,708 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 200nC @ 10V | ±20V | 14600pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO263 |
3,006 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7 |
6,876 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO263 |
5,112 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
7,794 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 105mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO263 |
2,358 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 130A TO263-7 |
3,960 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 8V, 10V | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 7300pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 120A TO263-3 |
7,614 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 120A (Tc) | 8V, 10V | 4.8mOhm @ 60A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 7800pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
3,726 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.8V @ 279µA | 222nC @ 10V | ±20V | 16900pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 200V 84A D2PAK |
6,696 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 84A (Tc) | 10V | 11.7mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6650pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120V 8HSOF |
7,272 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231nC @ 10V | ±20V | 16250pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2,394 |
|
CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 75mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 189W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-3 |
7,794 |
|
OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | 840pF @ 50V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 4VSON |
5,652 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 39A (Tc) | 10V | 85mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 154W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6,678 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
80V 300A 1.4MOHM TOLL |
6,156 |
|
OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (DC) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187nC @ 10V | ±20V | 13178pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 80V 300A PG-HSOG-8-1 |
2,088 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231nC @ 10V | ±20V | 16250pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 200 D2PAK-3 |
2,232 |
|
OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | ±20V | 650pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 600V 31A D2PAK |
4,932 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2,034 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 41A (Tc) | 10V | 65mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 201W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |