Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB60R125C6ATMA1

IPB60R125C6ATMA1

For Reference Only

Part Number IPB60R125C6ATMA1
PNEDA Part # IPB60R125C6ATMA1
Description MOSFET N-CH 600V 30A TO263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB60R125C6ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB60R125C6ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB60R125C6ATMA1 Datasheet
  • where to find IPB60R125C6ATMA1
  • Infineon Technologies

  • Infineon Technologies IPB60R125C6ATMA1
  • IPB60R125C6ATMA1 PDF Datasheet
  • IPB60R125C6ATMA1 Stock

  • IPB60R125C6ATMA1 Pinout
  • Datasheet IPB60R125C6ATMA1
  • IPB60R125C6ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB60R125C6ATMA1 Price
  • IPB60R125C6ATMA1 Distributor

IPB60R125C6ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2127pF @ 100V
FET Feature-
Power Dissipation (Max)219W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

ZVN2120ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZXMP4A16GQTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

PCFD045N10AW

MICROSS/On Semiconductor

Manufacturer

MICROSS/On Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SUD50N024-09P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

22V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

FET Feature

-

Power Dissipation (Max)

6.5W (Ta), 39.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FK4B01100L1

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 236µA

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

275pF @ 10V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Supplier Device Package

XLGA004-W-0808-RA01

Package / Case

4-XFLGA, CSP

Recently Sold

LT8609SEV#PBF

LT8609SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16LQFN

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

XC7Z020-1CLG400I

XC7Z020-1CLG400I

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

B1250T

B1250T

Bourns

FUSE BRD MNT 1.25A 600VAC 2SMD

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

LTM8026IV#PBF

LTM8026IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 1.2-24V 120W

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

HCS3920FTL500

HCS3920FTL500

Stackpole Electronics

RES 500 UOHM 1% 5W 3920

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

BSS123

BSS123

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23