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IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

For Reference Only

Part Number IAUT300N08S5N012ATMA2
PNEDA Part # IAUT300N08S5N012ATMA2
Description MOSFET N-CH 75V 120V 8HSOF
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IAUT300N08S5N012ATMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIAUT300N08S5N012ATMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IAUT300N08S5N012ATMA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs231nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16250pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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