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IPB083N15N5LFATMA1

IPB083N15N5LFATMA1

For Reference Only

Part Number IPB083N15N5LFATMA1
PNEDA Part # IPB083N15N5LFATMA1
Description MOSFET N-CH 150V 105A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB083N15N5LFATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB083N15N5LFATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB083N15N5LFATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.9V @ 134µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 75V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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