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IPB038N12N3GATMA1

IPB038N12N3GATMA1

For Reference Only

Part Number IPB038N12N3GATMA1
PNEDA Part # IPB038N12N3GATMA1
Description MOSFET N-CH 120V 120A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,750
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB038N12N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB038N12N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB038N12N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs211nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 60V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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