Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPP06N80C3XK

SPP06N80C3XK

For Reference Only

Part Number SPP06N80C3XK
PNEDA Part # SPP06N80C3XK
Description MOSFET N-CH 800V 6A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,408
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP06N80C3XK Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP06N80C3XK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPP06N80C3XK Datasheet
  • where to find SPP06N80C3XK
  • Infineon Technologies

  • Infineon Technologies SPP06N80C3XK
  • SPP06N80C3XK PDF Datasheet
  • SPP06N80C3XK Stock

  • SPP06N80C3XK Pinout
  • Datasheet SPP06N80C3XK
  • SPP06N80C3XK Supplier

  • Infineon Technologies Distributor
  • SPP06N80C3XK Price
  • SPP06N80C3XK Distributor

SPP06N80C3XK Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds785pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

The Products You May Be Interested In

NTMFS5H419NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 155A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

CSD17552Q5A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

FDJ127P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 4.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC75-6 FLMP

Package / Case

SC75-6 FLMP

FQI5N30TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

AON7401L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 9A, 20V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 27W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3x3)

Package / Case

8-PowerVDFN

Recently Sold

MT41K256M16HA-125 IT:E

MT41K256M16HA-125 IT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

74HC4066BQ,115

74HC4066BQ,115

Nexperia

IC SWITCH QUAD 1X2 14DHVQFN

PZT3906

PZT3906

ON Semiconductor

TRANS PNP 40V 0.2A SOT223

TAJA106K016RNJ

TAJA106K016RNJ

CAP TANT 10UF 10% 16V 1206

MAX8869EUE18+

MAX8869EUE18+

Maxim Integrated

IC REG LINEAR POS ADJ 1A 16TSSOP

HX1188NL

HX1188NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

CAT93C57XI

CAT93C57XI

ON Semiconductor

IC EEPROM 2K SPI 1MHZ 8SOIC

DLW5BTN101SQ2L

DLW5BTN101SQ2L

Murata

CMC 6A 2LN 100 OHM SMD

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA