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SPI08N80C3

SPI08N80C3

For Reference Only

Part Number SPI08N80C3
PNEDA Part # SPI08N80C3
Description MOSFET N-CH 800V 8A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI08N80C3 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI08N80C3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI08N80C3, SPI08N80C3 Datasheet (Total Pages: 10, Size: 463.16 KB)
PDFSPI08N80C3 Datasheet Cover
SPI08N80C3 Datasheet Page 2 SPI08N80C3 Datasheet Page 3 SPI08N80C3 Datasheet Page 4 SPI08N80C3 Datasheet Page 5 SPI08N80C3 Datasheet Page 6 SPI08N80C3 Datasheet Page 7 SPI08N80C3 Datasheet Page 8 SPI08N80C3 Datasheet Page 9 SPI08N80C3 Datasheet Page 10

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SPI08N80C3 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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