Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIPC26N60CFDX1SA1

SIPC26N60CFDX1SA1

For Reference Only

Part Number SIPC26N60CFDX1SA1
PNEDA Part # SIPC26N60CFDX1SA1
Description MOSFET COOL MOS 600V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIPC26N60CFDX1SA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSIPC26N60CFDX1SA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIPC26N60CFDX1SA1 Datasheet
  • where to find SIPC26N60CFDX1SA1
  • Infineon Technologies

  • Infineon Technologies SIPC26N60CFDX1SA1
  • SIPC26N60CFDX1SA1 PDF Datasheet
  • SIPC26N60CFDX1SA1 Stock

  • SIPC26N60CFDX1SA1 Pinout
  • Datasheet SIPC26N60CFDX1SA1
  • SIPC26N60CFDX1SA1 Supplier

  • Infineon Technologies Distributor
  • SIPC26N60CFDX1SA1 Price
  • SIPC26N60CFDX1SA1 Distributor

SIPC26N60CFDX1SA1 Specifications

ManufacturerInfineon Technologies
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

PMZB290UNE2YL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

320mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta), 5.43W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

FQA36P15

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3320pF @ 25V

FET Feature

-

Power Dissipation (Max)

294W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

440A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

405nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

2SJ067400L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

18Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

12pF @ 3V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SSSMini3-F1

Package / Case

SOT-723

STP7NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

363pF @ 50V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

CDBA540-HF

CDBA540-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A DO214AC

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

DMF3Z5R5H474M3DTA0

DMF3Z5R5H474M3DTA0

Murata

CAP SUPER 470MF 5.5V 3-SMD

LK115D33-TR

LK115D33-TR

STMicroelectronics

IC REG LINEAR 3.3V 100MA 8SO

ATMEGA328P-15AZ

ATMEGA328P-15AZ

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

AT93C57W-10SC

AT93C57W-10SC

Microchip Technology

IC EEPROM 2K SPI 2MHZ 8SOIC

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

LTC1569CS8-6#PBF

LTC1569CS8-6#PBF

Linear Technology/Analog Devices

IC FILTER 64KHZ LINEAR PHS 8SOIC

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO