IPS060N03LGBKMA1
For Reference Only
| Part Number | IPS060N03LGBKMA1 |
| PNEDA Part # | IPS060N03LGBKMA1 |
| Description | MOSFET N-CHANNEL 30V 50A TO251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,500 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPS060N03LGBKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPS060N03LGBKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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IPS060N03LGBKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Stub Leads, IPak |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
