Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 13/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT223 |
199,800 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223 |
43,170 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 57.5mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
44,364 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.2V @ 250µA | 21nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SOIC |
118,110 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | ±20V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3 |
61,620 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 22mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | ±20V | 1600pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
91,980 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 770pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 4.6A 8-SOIC |
35,550 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 70mOhm @ 4.6A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 870pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
212,628 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5nC @ 10V | ±25V | 4785pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 100V 4.2A TO252-3 |
19,860 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Tc) | 4.5V, 10V | 850mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | ±20V | 372pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313 |
22,830 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 7.3mOhm @ 50A, 10V | 2.2V @ 17µA | 30nC @ 10V | +20V, -16V | 2340pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8 |
65,382 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | ±20V | 2204pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
29,334 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 1A SOT-223 |
17,040 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tc) | 4.5V, 10V | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | ±20V | 372pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON |
45,072 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.3V @ 14µA | 15nC @ 10V | ±20V | 1075pF @ 30V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
25,200 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 56A DPAK |
64,044 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1150pF @ 15V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 29A DPAK |
46,818 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 2V @ 28µA | 13nC @ 5V | ±20V | 800pF @ 30V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SOIC |
135,798 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 11.9mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | ±20V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 55V 20A DPAK |
105,114 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 1.9A 8-SOIC |
64,944 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.9A (Ta) | 10V | 280mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | ±30V | 330pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
35,556 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 9.7A TO252-3 |
267,450 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | ±20V | 450pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
23,976 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 46A TDSON-8 |
74,946 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 6V, 10V | 9.7mOhm @ 40A, 10V | 3.3V @ 14µA | 15nC @ 10V | ±20V | 1075pF @ 30V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 3A SOT223 |
23,232 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO252-3 |
37,878 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT-223 |
22,038 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223 |
17,328 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | ±20V | 262pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 8.83A 3TO252 |
43,056 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.83A (Ta) | 6.2V | 300mOhm @ 10A, 6.2V | 4V @ 250µA | 13nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DPAK |
34,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |