Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 12/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59-3 |
218,232 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 620mA (Ta) | 4.5V, 10V | 800mOhm @ 620mA, 10V | 2V @ 160µA | 6nC @ 10V | ±20V | 176pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 3.7A SC-59 |
213,516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 2.5V | 23mOhm @ 3.7A, 2.5V | 750mV @ 30µA | 4.7nC @ 2.5V | ±8V | 1447pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 200V 600MA 6-TSOP |
27,246 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 2.2Ohm @ 360mA, 10V | 5.5V @ 250µA | 3.9nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT-89 |
46,302 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | 97pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 20V 3.2A 6-TSOP |
277,416 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.7V, 4.5V | 100mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 7nC @ 4.5V | ±12V | 300pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
76,806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | ±20V | 760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 0.9A 6-TSOP |
47,622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 900mA (Ta) | 10V | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN |
79,692 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1019pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 58A DPAK |
22,620 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | 1350pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 2.4A 6-TSOP |
27,468 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 200mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | ±12V | 210pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 10A PQFN |
31,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | ±12V | 1110pF @ 10V | - | 1.98W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8 |
47,844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1200pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SOIC |
87,156 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 13.3mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | ±25V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89 |
176,844 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | ±20V | 104pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 4SOT223 |
34,548 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 4.5V, 10V | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4nC @ 10V | ±20V | 140pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 260MA 4SOT223 |
29,574 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 2.8V, 10V | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | ±20V | 104pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8 |
38,316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A 6-TSOP |
237,978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 60V 4.5A 6TSOP |
22,530 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 4.5A (Ta) | 4.5V, 10V | 60mOhm @ 4.5A, 10V | 2.3V @ 15µA | 5.6nC @ 5V | ±20V | 657pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CHANNEL 650V 5A TO252 |
105,948 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 49W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 6A 6TSOP |
24,678 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20nC @ 10V | ±12V | 1007pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 35A TSDSON-8 |
122,430 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 35A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | ±20V | 970pF @ 15V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT23 |
48,666 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 2.1nC @ 5V | ±20V | 28pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT23 |
29,460 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9nC @ 5V | ±20V | 44pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
210,390 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO252-3 |
19,944 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 5.7A MICRO8 |
33,888 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.7A (Ta) | 2.7V, 4.5V | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 1.9A SOT223 |
18,678 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 1.9A (Ta) | 10V | 160mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 190pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 18A 8-SOIC |
62,526 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | ±20V | 2315pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CHANNEL 500V 9A SOT223 |
25,278 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |