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IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

For Reference Only

Part Number IPN80R2K0P7ATMA1
PNEDA Part # IPN80R2K0P7ATMA1
Description MOSFET N-CHANNEL 800V 3A SOT223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 23,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPN80R2K0P7ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPN80R2K0P7ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPN80R2K0P7ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds175pF @ 500V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3

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