Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSP125H6327XTSA1

BSP125H6327XTSA1

For Reference Only

Part Number BSP125H6327XTSA1
PNEDA Part # BSP125H6327XTSA1
Description MOSFET N-CH 600V 120MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 23,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP125H6327XTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP125H6327XTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSP125H6327XTSA1 Datasheet
  • where to find BSP125H6327XTSA1
  • Infineon Technologies

  • Infineon Technologies BSP125H6327XTSA1
  • BSP125H6327XTSA1 PDF Datasheet
  • BSP125H6327XTSA1 Stock

  • BSP125H6327XTSA1 Pinout
  • Datasheet BSP125H6327XTSA1
  • BSP125H6327XTSA1 Supplier

  • Infineon Technologies Distributor
  • BSP125H6327XTSA1 Price
  • BSP125H6327XTSA1 Distributor

BSP125H6327XTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

NVMYS3D5N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK

SQ2337ES-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

290mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFR1N60A

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

229pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3418TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3510pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CSD16415Q5

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.15mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

+16V, -12V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSON-CLIP (5x6)

Package / Case

8-PowerTDFN

Recently Sold

LTM4616EV#PBF

LTM4616EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 0.6-5V

LM239AD

LM239AD

STMicroelectronics

IC VOLT COMPARATOR QUAD 14-SOIC

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

MM74HC14M

MM74HC14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

ISD2360SYI

ISD2360SYI

Nuvoton Technology

IC VOICE REC/PLAY 64SEC 16SOP

KSR223GLFG

KSR223GLFG

C&K

SWITCH TACTILE SPST-NO 0.01A 32V

LNG995PFBW

LNG995PFBW

Panasonic Electronic Components

LED BLUE 5.8MM OVAL T/H

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

744770122

744770122

Wurth Electronics

FIXED IND 22UH 4.1A 43 MOHM SMD