BSZ088N03LSGATMA1
For Reference Only
| Part Number | BSZ088N03LSGATMA1 |
| PNEDA Part # | BSZ088N03LSGATMA1 |
| Description | MOSFET N-CH 30V 40A TSDSON-8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 44,364 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSZ088N03LSGATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSZ088N03LSGATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BSZ088N03LSGATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 35W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerTDFN |
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Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 525V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 50V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 3.6Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13.5pF @ 3V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package USM Package / Case SC-70, SOT-323 |
