Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 19/27
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
7,758 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A D2PAK |
7,308 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS |
3,870 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-220SIS |
4,068 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 270mOhm @ 9A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 19A TO-220SIS |
6,642 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 19A (Ta) | 10V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220SIS |
7,920 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220 |
8,478 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
7,758 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220 |
6,552 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220 |
6,678 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A I2PAK |
6,480 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A 5DFN |
2,394 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247 |
5,220 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-220 |
4,392 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220SIS |
7,092 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
5,634 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-3P(N) |
2,088 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
5,580 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | ±20V | 2500pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8-SOP |
4,014 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 20mOhm @ 5A, 10V | 2V @ 1mA | 45nC @ 10V | ±20V | 2260pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A 8-SOPA |
7,686 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | 21mOhm @ 13A, 10V | 2.3V @ 1mA | 22nC @ 10V | ±20V | 1375pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 20A 8-SOPA |
8,946 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 10V | 47mOhm @ 10A, 10V | 5V @ 1mA | 15nC @ 10V | ±20V | 1000pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 7A 8-SOPA |
7,452 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 5.5A 8-SOPA |
5,058 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Ta) | 10V | 450mOhm @ 2.7A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A 8-SOPA |
3,114 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD |
6,228 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | ±20V | 630pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A VS-8 |
3,096 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | ±20V | 1760pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A VS-8 |
2,772 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 28mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | ±8V | 1600pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8 |
5,976 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2V, 4.5V | 49mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | ±12V | 590pF @ 10V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.7A VS-8 |
3,598 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 1.8V, 4.5V | 110mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | ±8V | 470pF @ 10V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 1A PW-MINI |
6,840 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 700mOhm @ 500mA, 10V | 2V @ 1mA | 6.3nC @ 10V | ±20V | 140pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |