Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 17/27
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS |
6,588 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 8A (Ta) | 10V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7.5A TO-220SIS |
3,526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3A TO-220SIS |
4,698 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
5,004 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS |
6,444 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 550mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 35A TO-220AB |
8,208 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 7.5A TO-220SIS |
3,492 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8,010 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | ±20V | 10100pF @ 10V | - | 375W (Tc) | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS |
3,580 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A DPAK |
3,222 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 9A TO-220SIS |
3,436 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 9A (Ta) | 10V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 56A TO-220 |
3,472 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 168W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS |
8,802 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7.5A TO-220SIS |
6,426 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 7.5A (Ta) | 10V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A TO-220SIS |
6,552 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 650mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7.5A TO-220SIS |
5,814 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A IPAK |
4,680 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A 5DFN |
4,860 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 88.3W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 11A TO-220SIS |
6,030 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 10A TO-220SIS |
6,534 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220AB |
5,616 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | - | 15mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | - | 4000pF @ 10V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 15A TO-220SIS |
5,238 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A TO-220SIS |
7,506 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
5,094 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A IPAK |
5,652 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A IPAK-3 |
2,466 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
4,086 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Ta) | 10V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 8.5A TO-220SIS |
5,166 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 8.5A (Ta) | 10V | 860mOhm @ 4.3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9A TO-220SIS |
4,140 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Ta) | 10V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A IPAK |
6,354 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |