Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single

ManufacturerToshiba Semiconductor and Storage

Records 786

Page 27/27

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK3670(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH	8,730	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK3670(T6CANO,F,M	Toshiba Semiconductor and Storage	MOSFET N-CH	4,590	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK3670,F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	4,680	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK3670,F(M	Toshiba Semiconductor and Storage	MOSFET N-CH	3,510	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SJ668(TE16L1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CHANNEL 60V 5A PW-MOLD	5,202	U-MOSIII	P-Channel	MOSFET (Metal Oxide)	60V	5A (Ta)	4V, 10V	170mOhm @ 2.5A, 10V	2V @ 1mA	15nC @ 10V	±20V	700pF @ 10V	-	20W (Tc)	150°C	Surface Mount	PW-MOLD	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K35MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM NCH S-MOS TRANSIST	2,610	-	N-Channel	MOSFET (Metal Oxide)	20V	180mA (Ta)	1.2V, 4V	3Ohm @ 50mA, 4V	1V @ 1mA	-	±10V	9.5pF @ 3V	-	150mW (Ta)	150°C	Surface Mount	VESM	SOT-723

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