Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 11/27
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA ESV |
5,328 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | ESV | SOT-553 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.2A SMINI |
6,426 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V | 2Ohm @ 50MA, 2.5V | 1.5V @ 100µA | - | ±20V | 70pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 10A |
4,608 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 2.5V, 4.5V | 12mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4nC @ 4.5V | ±12V | 710pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A 6WCSP |
3,636 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 2.5V, 8.5V | 31mOhm @ 3A, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | ±12V | 870pF @ 10V | - | 1.2W (Ta) | 150°C (TJ) | Surface Mount | - | 6-UFBGA, WLCSP |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8SOP |
3,204 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | ±20V | 2000pF @ 30V | - | 1.6W (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 0.2A S-MINI |
7,938 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 2Ohm @ 50mA, 10V | - | - | ±20V | 85pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 25A 8TSON |
16,500 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 6.8mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | ±25V | 1600pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 18A 8TSON |
6,612 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4V, 10V | 12mOhm @ 9A, 10V | 2V @ 1mA | 38nC @ 10V | ±20V | 1600pF @ 10V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP |
2,646 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.3V @ 500µA | 46nC @ 10V | ±20V | 4400pF @ 15V | - | 1.6W (Ta), 64W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A DPAK |
4,428 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 90A DPAK |
5,814 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | ±20V | 5400pF @ 10V | - | 157W (Tc) | 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO247 |
5,526 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A I2PAK |
7,578 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F |
3,870 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 134mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | +10V, -20V | 660pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 6UDFN |
7,128 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 20mOhm @ 4A, 10V | 2.2V @ 250µA | 20.4nC @ 4.5V | +20V, -25V | 1150pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
2,322 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | ±20V | 3600pF @ 20V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 116A 8DSOP |
4,662 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP |
6,210 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.8mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A |
4,500 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
8,550 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 200MA SSM |
6,750 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TA) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A USM |
5,652 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USM |
8,046 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A 6UDFN |
4,194 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A |
3,006 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | ±20V | 7200pF @ 20V | - | 960mW (Ta), 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 40A TO-220 |
4,590 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 67W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A UDFN6B |
2,034 |
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U-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 19.5mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | ±20V | 620pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 43A TO-220 |
8,586 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Ta) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 53W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 35A TO-220 |
4,536 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 100A DPAK |
8,100 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | ±20V | 5490pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |