2SK2009TE85LF
For Reference Only
| Part Number | 2SK2009TE85LF |
| PNEDA Part # | 2SK2009TE85LF |
| Description | MOSFET N-CH 30V 0.2A SMINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 6,426 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SK2009TE85LF Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 2SK2009TE85LF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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2SK2009TE85LF Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50MA, 2.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 3V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-59-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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