TPH1R403NL,L1Q
For Reference Only
| Part Number | TPH1R403NL,L1Q |
| PNEDA Part # | TPH1R403NL-L1Q |
| Description | MOSFET N-CH 30V 60A 8-SOP |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,646 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TPH1R403NL Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TPH1R403NL,L1Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPH1R403NL,L1Q Datasheet
- where to find TPH1R403NL,L1Q
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPH1R403NL,L1Q
- TPH1R403NL,L1Q PDF Datasheet
- TPH1R403NL,L1Q Stock
- TPH1R403NL,L1Q Pinout
- Datasheet TPH1R403NL,L1Q
- TPH1R403NL,L1Q Supplier
- Toshiba Semiconductor and Storage Distributor
- TPH1R403NL,L1Q Price
- TPH1R403NL,L1Q Distributor
TPH1R403NL Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 64W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.3mOhm @ 13.9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8SH Package / Case PowerPAK® 1212-8SH |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 15.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 15.3A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2819pF @ 20V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 15V FET Feature - Power Dissipation (Max) 910mW (Ta), 19.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer Microsemi Corporation Series POWER MOS 8™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 430mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4595pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D3Pak Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 950V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
