Taiwan Semiconductor Corporation Rectifiers - Single

Series

Reset

Diode Type

Reset

Voltage - DC Reverse (Vr) (Max)

Reset

Current - Average Rectified (Io)

Reset

Voltage - Forward (Vf) (Max) @ If

Reset

Speed

Reset

Reverse Recovery Time (trr)

Reset

Current - Reverse Leakage @ Vr

Reset

Capacitance @ Vr, F

Reset

Mounting Type

Reset

Package / Case

Reset

Supplier Device Package

Reset

Operating Temperature - Junction

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 43/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RS1JHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	4,680	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFKL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	4,932	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF4006HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	7,956	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	2,556	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS110L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	7,056	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	5,022	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER103G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6,714	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER107G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	3,564	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	5,598	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2,304	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	6,264	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1AL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	8,640	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2,826	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2,088	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	3,726	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5,274	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	2,808	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFBLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 500MA SUBSMA	2,214	Automotive, AEC-Q101	Standard	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1K R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	6,066	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1KHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	7,524	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1MHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	2,502	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
B0520LWF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 500MA SOD123F	6,102	-	Schottky	20V	500mA	385mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 20V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 125°C
B0530WF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 500MA SOD123F	4,086	-	Schottky	30V	500mA	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 125°C
B0540WF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 500MA SOD123F	6,048	-	Schottky	40V	500mA	510mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
SRT12HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	8,874	Automotive, AEC-Q101	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	2,862	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT15HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	5,148	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT12HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	8,370	Automotive, AEC-Q101	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	8,190	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT15HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	3,330	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

«
‹
1
...
40
41
42
43 (current)
44
45
46
...
180
›
»

Send Message

Certifications

Taiwan Semiconductor Corporation Rectifiers - Single

Resources

Support

Social Media

Need Help?
Send Message