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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 46/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
HER106G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
2,808
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER107G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
7,668
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER108G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
5,112
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1A R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
5,076
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
8,784
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
6,264
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7,974
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
6,138
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
2,304
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
3,456
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
6,192
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
4,338
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5,472
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
8,874
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS16L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SUB SMA
7,974
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SF12G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7,272
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SF13G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO204AL
2,772
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SF14G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
5,850
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SF12G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
4,158
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR205G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
8,082
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR206G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
2,214
-
Standard
800V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR207G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
5,364
-
Standard
-
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SRT12HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A TS-1
8,658
Automotive, AEC-Q101
Schottky
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
SRT13HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A TS-1
7,092
Automotive, AEC-Q101
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
SRT14HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A TS-1
3,562
Automotive, AEC-Q101
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
SS12LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
6,120
Automotive, AEC-Q101
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS13LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
8,028
Automotive, AEC-Q101
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS14LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
3,294
Automotive, AEC-Q101
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS15LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
7,200
Automotive, AEC-Q101
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS16LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SUB SMA
4,464
Automotive, AEC-Q101
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C