Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 40/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SRT13 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	5,130	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT15 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	3,510	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT16 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A TS-1	3,672	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT12 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	4,392	-	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	2,790	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	8,640	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT15 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	3,312	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT16 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A TS-1	8,190	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1AHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	2,574	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1BHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	2,556	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1DHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4,986	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RSFKLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	3,600	Automotive, AEC-Q101	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS14L RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	2,214	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	4,446	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	3,544	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	7,236	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	8,064	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	7,326	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS15L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	6,858	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	2,196	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF4006 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	8,280	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
F1T7G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	5,130	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S2KA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	5,040	-	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2MA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO214AC	6,156	-	Standard	-	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
F1T4GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2,016	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	4,338	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS110L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	3,508	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	8,730	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS12LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	3,240	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	4,068	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C

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