Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 41/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS13LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	7,290	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	4,140	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	6,228	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	5,148	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS15LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	4,860	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	2,790	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	8,964	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	4,230	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	2,448	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	7,344	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RB520G-30 RLG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 100MA SOD723	2,484	-	Schottky	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	-	Surface Mount	SOD-723	SOD-723	125°C (Max)
S1GHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	5,670	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RSFJL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	5,022	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	7,884	-	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	7,362	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	2,178	-	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR115 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO204AL	3,852	-	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR115HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO204AL	8,694	Automotive, AEC-Q101	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	2,430	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	5,526	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	5,076	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	8,766	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FR151G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	6,066	-	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR152G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	4,392	-	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR153G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	6,930	-	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR154G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	4,248	-	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR155G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	8,946	-	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR156G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	4,968	-	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR157G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	7,704	-	Standard	-	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SRT12 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	5,148	-	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C

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