Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 836/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
6,210 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Ta) | 7V, 10V | 4.2mOhm @ 22.5A, 10V | 3V @ 1mA | 62nC @ 10V | ±20V | 4650pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 40V 30A LFPAK |
4,500 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta) | 7V, 10V | 7.5mOhm @ 15A, 10V | 3V @ 1mA | 32nC @ 10V | ±20V | 2420pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
2,268 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | - | ±8V | 250pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A |
3,258 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 40A 3DP 2-7K1A |
5,832 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | ±20V | 1920pF @ 10V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A TO220SIS |
2,016 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A 8SOIC |
7,722 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 13mOhm @ 10A, 10V | 2.5V @ 1mA | 14nC @ 5V | 20V | 1070pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 10.5A 8SOIC |
4,356 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4V, 10V | 11.7mOhm @ 10.5A, 10V | 2.5V @ 1mA | 15nC @ 5V | 20V | 1130pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8SOIC |
7,362 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 10.7mOhm @ 11A, 10V | 2.5V @ 1mA | 17nC @ 5V | 20V | 1300pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 12A 8SOIC |
2,754 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4V, 10V | 10mOhm @ 12A, 10V | 2.5V @ 1mA | 25nC @ 5V | 20V | 1360pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8SOIC |
3,546 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 8.9mOhm @ 12.5A, 10V | 2.5V @ 1mA | 28nC @ 5V | 20V | 1670pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4V, 10V | 8.1mOhm @ 13A, 10V | 2.5V @ 1mA | 35nC @ 5V | 20V | 2000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 60V 8A 8-SOIC |
4,374 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 4A 8SOIC |
2,610 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 58mOhm @ 4A, 10V | 2.5V @ 1mA | 8nC @ 5V | ±20V | 800pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A 8SOIC |
4,878 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 42mOhm @ 5A, 10V | 2.5V @ 1mA | 13nC @ 5V | ±20V | 1200pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 6.5A 8SOIC |
5,148 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4V, 10V | 26mOhm @ 6.5A, 10V | 2.5V @ 1mA | 6.1nC @ 5V | ±20V | 430pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOIC |
4,662 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 30nC @ 5V | ±20V | 2900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC |
5,634 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC |
2,574 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 14mOhm @ 9A, 10V | 2.5V @ 1mA | 39nC @ 5V | 20V | 4000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 174A 2WDSON |
5,778 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 174A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2.2V @ 250µA | 92nC @ 10V | ±20V | 8400pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 145A 2WDSON |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 145A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 4900pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 71A 2WDSON |
7,488 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29nC @ 10V | ±20V | 2700pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 71A 2WDSON |
8,100 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29nC @ 10V | ±20V | 2700pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 53A MG-WDSON-2 |
7,920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1800pF @ 15V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT23 |
6,966 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 2.1nC @ 5V | ±20V | 28pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 21MA SOT23 |
6,606 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 500Ohm @ 16mA, 10V | 2.6V @ 8µA | 1nC @ 10V | ±20V | 28pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT23 |
4,410 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9nC @ 5V | ±20V | 44pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT23 |
3,454 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | ±20V | 294pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 2.3A SOT23 |
6,786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 2.5V | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | ±8V | 529pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT323 |
3,690 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 160mOhm @ 1.4A, 2.5V | 750mV @ 3.7µA | 0.6nC @ 2.5V | ±8V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |