Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RSS125N03FU6TB

RSS125N03FU6TB

For Reference Only

Part Number RSS125N03FU6TB
PNEDA Part # RSS125N03FU6TB
Description MOSFET N-CH 30V 12.5A 8SOIC
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RSS125N03FU6TB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRSS125N03FU6TB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RSS125N03FU6TB, RSS125N03FU6TB Datasheet (Total Pages: 4, Size: 59.89 KB)
PDFRSS125N03FU6TB Datasheet Cover
RSS125N03FU6TB Datasheet Page 2 RSS125N03FU6TB Datasheet Page 3 RSS125N03FU6TB Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RSS125N03FU6TB Datasheet
  • where to find RSS125N03FU6TB
  • Rohm Semiconductor

  • Rohm Semiconductor RSS125N03FU6TB
  • RSS125N03FU6TB PDF Datasheet
  • RSS125N03FU6TB Stock

  • RSS125N03FU6TB Pinout
  • Datasheet RSS125N03FU6TB
  • RSS125N03FU6TB Supplier

  • Rohm Semiconductor Distributor
  • RSS125N03FU6TB Price
  • RSS125N03FU6TB Distributor

RSS125N03FU6TB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs8.9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs28nC @ 5V
Vgs (Max)20V
Input Capacitance (Ciss) (Max) @ Vds1670pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

PSMN4R0-30YL,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 12V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

2SJ058200L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 10W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-G2

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STB47N50DM6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFR9024TRPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIRC18DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

111nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

5060pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

54.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

74LVC02AD,118

74LVC02AD,118

Nexperia

IC GATE NOR 4CH 2-INP 14SO

STD03N

STD03N

Sanken

TRANS NPN DARL 160V 15A TO-3P-5

MMSD4148T1G

MMSD4148T1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

MT25QL128ABA1EW9-0SIT

MT25QL128ABA1EW9-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

M29W320EB70ZE6E

M29W320EB70ZE6E

Micron Technology Inc.

IC FLASH 32M PARALLEL 48TFBGA

AC0603FR-07100KL

AC0603FR-07100KL

Yageo

RES SMD 100K OHM 1% 1/10W 0603

BAS40-04-7-F

BAS40-04-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT23-3

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

AD780ARZ-REEL7

AD780ARZ-REEL7

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

EEU-FR1E101B

EEU-FR1E101B

Panasonic Electronic Components

CAP ALUM 100UF 20% 25V RADIAL

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA