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BSB053N03LP G

BSB053N03LP G

For Reference Only

Part Number BSB053N03LP G
PNEDA Part # BSB053N03LP-G
Description MOSFET N-CH 30V 71A 2WDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,488
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 26 - May 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB053N03LP G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB053N03LP G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSB053N03LP G, BSB053N03LP G Datasheet (Total Pages: 11, Size: 561.26 KB)
PDFBSB053N03LP G Datasheet Cover
BSB053N03LP G Datasheet Page 2 BSB053N03LP G Datasheet Page 3 BSB053N03LP G Datasheet Page 4 BSB053N03LP G Datasheet Page 5 BSB053N03LP G Datasheet Page 6 BSB053N03LP G Datasheet Page 7 BSB053N03LP G Datasheet Page 8 BSB053N03LP G Datasheet Page 9 BSB053N03LP G Datasheet Page 10 BSB053N03LP G Datasheet Page 11

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BSB053N03LP G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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