Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 425/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET P-CH 30V 50A VDFN3333-8 |
5,940 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 11.5A, 10V | 3V @ 250µA | 64.2nC @ 10V | ±25V | 2826pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 50A VDFN3333-8 |
2,610 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 11.5A, 10V | 3V @ 250µA | 64.2nC @ 10V | ±25V | 2826pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 6.9A 1212-8 |
3,562 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 6.9A (Tc) | 6V, 10V | 195mOhm @ 2.5A, 10V | 3.5V @ 250µA | 8nC @ 10V | ±20V | 210pF @ 50V | - | 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET P-CH 20V 18A 8-TSSOP |
8,856 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Tc) | 1.8V, 4.5V | 16mOhm @ 4.5A, 4.5V | 1V @ 250µA | 59nC @ 8V | ±10V | 2760pF @ 15V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
X35 PB-FREE POWER MOSFET TRANSIS |
4,374 |
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- | P-Channel | MOSFET (Metal Oxide) | 32V | 5.5A (Ta) | 4V, 10V | 35mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | ±20V | 1760pF @ 10V | - | 2.14W (Ta) | 150°C (TJ) | Surface Mount | PS-8 | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
6,876 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12.1A (Ta), 54.8A (Tc) | 4.5V, 10V | 7.9mOhm @ 12A, 10V | 3V @ 250µA | 17.1nC @ 10V | ±20V | 1179pF @ 20V | - | 1.9W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
2,898 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 12.1A (Ta), 54.8A (Tc) | 4.5V, 10V | 7.9mOhm @ 12A, 10V | 3V @ 250µA | 17.1nC @ 10V | ±20V | 1179pF @ 20V | - | 1.9W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 60V SOT-223 |
4,284 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 40V SG NCH U8FL |
4,986 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 69A (Tc) | 10V | 5.6mOhm @ 35A, 10V | 3.5V @ 40µA | 16nC @ 10V | ±20V | 1000pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO252 T&R |
2,898 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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Infineon Technologies |
CONSUMER |
6,750 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO251 |
2,484 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 6.5A 6-MLP 2X2 |
4,464 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 23mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | ±20V | 450pF @ 15V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
CONSUMER |
8,550 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
6,750 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 400V 4.2A TO251A |
6,714 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 4.2A (Tc) | 10V | 1.6Ohm @ 1A, 10V | 4.5V @ 250µA | 8.5nC @ 10V | ±30V | 400pF @ 25V | - | 78W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 105V 40A TO252 |
7,524 |
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- | N-Channel | MOSFET (Metal Oxide) | 105V | 40A (Tc) | 6V, 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 46nC @ 10V | ±25V | 2445pF @ 25V | - | 2.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 5.5A TO252 |
3,456 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.5A (Ta), 25A (Tc) | 4.5V, 10V | 34mOhm @ 10A, 10V | 2.7V @ 250µA | 20nC @ 10V | ±20V | 870pF @ 50V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH |
2,556 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 70A (Tc) | 10V, 20V | 6.7mOhm @ 20A, 20V | 3.5V @ 250µA | 65nC @ 10V | ±25V | 2760pF @ 15V | - | 2.5W (Ta), 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 34A |
4,878 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 70A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 2160pF @ 15V | - | 4.2W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 1.6A IPAK |
4,986 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | 10V | 5.3Ohm @ 800mA, 10V | 3.7V @ 250µA | 8nC @ 10V | ±30V | 230pF @ 25V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 8.8A 25A 5DFN |
5,724 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2V @ 16µA | 5nC @ 10V | ±20V | 410pF @ 25V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 15A 8SOP |
5,508 |
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U-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 9mOhm @ 7.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 74A |
6,084 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 4.8mOhm @ 35A, 10V | 2V @ 40µA | 11nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 600V TO252 |
7,452 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 55A DPAK |
6,984 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 10V | 13mOhm @ 10A, 10V | 3V @ 1mA | 44nC @ 10V | ±16V | 1986pF @ 25V | - | 102W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V U-DFN2020- |
7,218 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 9.4A (Ta) | 4.5V, 10V | 18mOhm @ 10A, 10V | 3V @ 250µA | 15.3nC @ 10V | ±20V | 925pF @ 30V | - | 1.06W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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Sanken |
MOSFET N-CH 30V 48A TO-252 |
7,848 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Tc) | 4.5V, 10V | 4mOhm @ 47.2A, 10V | 2.5V @ 650µA | 38.8nC @ 10V | ±20V | 2460pF @ 15V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Sanken |
MOSFET N-CH 40V 48A TO-252 |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Tc) | 4.5V, 10V | 5.2mOhm @ 35.4A, 10V | 2.5V @ 650µA | 35.3nC @ 10V | ±20V | 2410pF @ 25V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Sanken |
MOSFET N-CH 60V 47A TO-252 |
6,894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 9.1mOhm @ 23.6A, 10V | 2.5V @ 650µA | 38.6nC @ 10V | ±20V | 2520pF @ 25V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |