Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 428/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
40V 12 MOHM T6 S08FL SING |
7,992 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 35A (Tc) | 10V | 12mOhm @ 10A, 10V | 3.5V @ 250µA | 7.9nC @ 10V | ±20V | 420pF @ 25V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 54A DPAK |
8,172 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 21nC @ 11.5V | ±20V | 1350pF @ 12V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 70A POWERDI3333 |
4,176 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 6mOhm @ 11.5A, 10V | 3V @ 250µA | 64.2nC @ 10V | ±25V | 2826pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
7,146 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 25A, 10V | 2V @ 35µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
8,910 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 30V 10.2A DFN2523-6 |
5,022 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10.2A (Ta) | 4.5V, 10V | 14.5mOhm @ 9.5A, 10V | 3V @ 250µA | 90nC @ 10V | ±25V | 4414pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
2,070 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Panasonic Electronic Components |
MOSFET P-CH 20V 2A WSSMINI6-F1 |
6,930 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4V | 130mOhm @ 1A, 4V | 1.3V @ 1mA | - | ±10V | 400pF @ 10V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | WSSMini6-F1 | 6-SMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N CH 80V 8.5A TO252 |
4,356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 8.5A (Ta), 35A (Tc) | 6V, 10V | 15mOhm @ 20A, 10V | 3.5V @ 250µA | 22nC @ 10V | ±20V | 1109pF @ 40V | - | 2.5W (Ta), 53.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 11.5A |
6,210 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 10.4A POWERDI |
6,480 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta), 25A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 3V @ 250µA | 44nC @ 10V | +20V, -16V | 2370pF @ 15V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 10.4A POWERDI |
2,052 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta), 25A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 3V @ 250µA | 44nC @ 10V | +20V, -16V | 2370pF @ 15V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 21.7A 78A 5DFN |
5,112 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 21.7A (Ta), 78A (Tc) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 1972pF @ 15V | - | 2.57W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 21.7A 78A 5DFN |
3,186 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 21.7A (Ta), 78A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 1972pF @ 15V | - | 2.57W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
PFET U8FL 30V 15MO |
7,290 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 13.4A (Ta), 47.6A (Tc) | 4.5V, 10V | 9.3mOhm @ 12A, 10V | 3V @ 250µA | 62.3nC @ 10V | ±25V | 2706pF @ 15V | - | 2.66W (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 55V 17A TO252-3 |
2,700 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10nC @ 10V | ±20V | 293pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506 |
8,730 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V 53A LFPAK |
7,164 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 53A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 1mA | 24.5nC @ 10V | ±20V | 1838pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-89 |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | 14Ohm @ 50mA, 350mV | - | - | ±20V | - | Depletion Mode | 1.1W (Ta) | -40°C ~ 110°C (TA) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-223 |
3,420 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | 14Ohm @ 50mA, 350mV | - | - | ±20V | - | Depletion Mode | 2.5W (Ta) | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8TSON-ADV |
7,794 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 6.3mOhm @ 10A, 10V | 2.3V @ 200µA | 24nC @ 10V | ±20V | 1370pF @ 15V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V X4-DSN3015- |
4,788 |
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ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
2,844 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta) | 5V | 170mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | ±15V | 275pF @ 25V | - | 28.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 30V 150A POWERDI5060 |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 3V @ 1mA | 68nC @ 10V | ±20V | 3944pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 7A 8SOP |
2,448 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 7A (Ta) | 4.5V, 10V | 25mOhm @ 3.5A, 10V | 2V @ 200µA | 34nC @ 10V | +20V, -25V | 1580pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
CONSUMER |
7,380 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 60V S08FL SINGLE |
8,964 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2V @ 25µA | 9.7nC @ 10V | ±20V | 620pF @ 25V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
4,500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI33 |
8,424 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI33 |
6,336 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |