DMTH6016LFDFWQ-7
For Reference Only
| Part Number | DMTH6016LFDFWQ-7 |
| PNEDA Part # | DMTH6016LFDFWQ-7 |
| Description | MOSFET BVDSS: 41V-60V U-DFN2020- |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 7,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMTH6016LFDFWQ-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMTH6016LFDFWQ-7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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DMTH6016LFDFWQ-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 925pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 1.06W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | U-DFN2020-6 |
| Package / Case | 6-UDFN Exposed Pad |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 43A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 54mOhm @ 26A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
