Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 105/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
7,056 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 9mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 7400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 57A TO-247AC |
9,840 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5860pF @ 25V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
15,606 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3600pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV .1A TO-220AB |
23,760 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | - | 110Ohm @ 50mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 200V 40A TO-247 |
12,540 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 40A (Tc) | 10V | 45mOhm @ 20A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 2500pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-220 |
18,900 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 23A TO220-3 |
21,744 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 1500V 2A TO-3PF-3 |
14,868 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | - | 37.5nC @ 10V | ±35V | 380pF @ 30V | - | 3W (Ta), 50W (Tc) | 150°C (TJ) | Through Hole | TO-3PF-3 | SC-94 |
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ON Semiconductor |
MOSFET N-CH 500V 28A TO-3PN |
8,304 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 155mOhm @ 14A, 10V | 5V @ 250µA | 105nC @ 10V | ±30V | 5140pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
1700V .75 OHM 6A SIC FET |
17,460 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1700V | 5.9A (Tc) | 18V | 975mOhm @ 1.7A, 18V | 4V @ 630µA | 17nC @ 18V | +22V, -6V | 275pF @ 800V | - | 57W (Tc) | 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
MOSFET N-CH 600V 36A D2PAK |
16,896 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112nC @ 10V | ±30V | 4785pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC |
28,218 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 24A TO220FP |
19,272 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 37nC @ 10V | ±25V | 1370pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 600V 22A TO247 |
17,352 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 360mOhm @ 11A, 10V | 5V @ 1.5mA | 38nC @ 10V | ±30V | 2600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Texas Instruments |
MOSFET N-CH 60V 200A DDPAK |
7,608 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta), 349A (Tc) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 250µA | 140nC @ 10V | ±20V | 11430pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Vishay Siliconix |
MOSFET N-CH 1000V 6.1A TO-247AC |
9,048 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6.1A (Tc) | 10V | 2Ohm @ 3.6A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 2800pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO220FP |
7,812 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | ±25V | 2355pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 10.5A TO-247 |
15,780 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87nC @ 10V | ±30V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
6,336 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | ±20V | 10300pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 800V 14A TO-220 |
12,282 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32nC @ 10V | ±30V | 1100pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 30A TO252AA |
15,252 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 60mOhm @ 15A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1450pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 500V 10A TO-220 |
8,604 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CHANNEL 600V 30A TO220 |
14,640 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3nC @ 10V | ±25V | 1960pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO247-3 |
8,160 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Texas Instruments |
MOSFET N-CH 80V TO-220-3 |
11,487 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.2V @ 250µA | 156nC @ 10V | ±20V | 12200pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET P-CH 500V 10A TO-263 |
28,860 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 12A TO220 |
20,580 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29nC @ 10V | ±30V | 870pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 39A TO220 |
7,614 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET P-CH 100V 52A TO-263 |
7,308 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 50mOhm @ 500mA, 10V | 4.5V @ 250µA | 60nC @ 10V | ±20V | 2845pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 150V 36A TO-263 |
8,802 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |