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IXTP10P50P

IXTP10P50P

For Reference Only

Part Number IXTP10P50P
PNEDA Part # IXTP10P50P
Description MOSFET P-CH 500V 10A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP10P50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP10P50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP10P50P, IXTP10P50P Datasheet (Total Pages: 6, Size: 176.45 KB)
PDFIXTQ10P50P Datasheet Cover
IXTQ10P50P Datasheet Page 2 IXTQ10P50P Datasheet Page 3 IXTQ10P50P Datasheet Page 4 IXTQ10P50P Datasheet Page 5 IXTQ10P50P Datasheet Page 6

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IXTP10P50P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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