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IXTA52P10P

IXTA52P10P

For Reference Only

Part Number IXTA52P10P
PNEDA Part # IXTA52P10P
Description MOSFET P-CH 100V 52A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA52P10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA52P10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA52P10P, IXTA52P10P Datasheet (Total Pages: 6, Size: 182.03 KB)
PDFIXTH52P10P Datasheet Cover
IXTH52P10P Datasheet Page 2 IXTH52P10P Datasheet Page 3 IXTH52P10P Datasheet Page 4 IXTH52P10P Datasheet Page 5 IXTH52P10P Datasheet Page 6

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IXTA52P10P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2845pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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