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IXTP01N100D

IXTP01N100D

For Reference Only

Part Number IXTP01N100D
PNEDA Part # IXTP01N100D
Description MOSFET N-CH 1KV .1A TO-220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 23,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP01N100D Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP01N100D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP01N100D, IXTP01N100D Datasheet (Total Pages: 2, Size: 94.12 KB)
PDFIXTU01N100D Datasheet Cover
IXTU01N100D Datasheet Page 2

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IXTP01N100D Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs110Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.1W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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