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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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2SK4144(01)-S6-AZ
2SK4144(01)-S6-AZ

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

TRANSISTOR

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock2,880
2SK4150TZ-E
2SK4150TZ-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 0.4A TO-92

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
In Stock3,474
2SK4151TZ-E
2SK4151TZ-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 1A TO-92

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
In Stock4,770
2SK4171
2SK4171

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 100A TO220-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 75W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
In Stock5,220
2SK4177-DL-1E
2SK4177-DL-1E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1500V 2A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock19,908
2SK4177-DL-E
2SK4177-DL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1500V 2A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock4,086
2SK4177-E
2SK4177-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1500V 2A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock4,176
2SK4196LS
2SK4196LS

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 5.5A TO-220FI

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
In Stock7,200
2SK4196LS-1E
2SK4196LS-1E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 5.5A TO-220FI

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3FS
  • Package / Case: TO-220-3
In Stock4,176
2SK4197FS
2SK4197FS

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.3A TO-220F-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 28W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
In Stock3,978
2SK4197LS
2SK4197LS

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3.5A TO-220FI

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 28W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
In Stock6,984
2SK4198FS
2SK4198FS

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4A TO-220F-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
In Stock2,502
2SK4198LS
2SK4198LS

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 5A TO-220FI

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
In Stock2,934
2SK4209
2SK4209

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 12A TO-3PB

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.08Ohm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PB
  • Package / Case: TO-3P-3, SC-65-3
In Stock4,662
2SK4210
2SK4210

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 10A TO-3PB

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PB
  • Package / Case: TO-3P-3, SC-65-3
In Stock6,696
2SK4221
2SK4221

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 26A TO-3PB

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PB
  • Package / Case: TO-3P-3, SC-65-3
In Stock3,582
2SK4222
2SK4222

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 23A TO-3PB

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PB
  • Package / Case: TO-3P-3, SC-65-3
In Stock6,390
2SK536-MTK-TB-E
2SK536-MTK-TB-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.1A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock2,628
2SK536-TB-E
2SK536-TB-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.1A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock4,428
2V7002KT1G
2V7002KT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 320MA SOT-23-3

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock316,320
2V7002LT1G
2V7002LT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.115A SOT-23-3

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock5,076,684
2V7002LT3G
2V7002LT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V .115A

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock797,736
2V7002WT1G
2V7002WT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 310MA SC70-3

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
In Stock94,038
3LN01C-TB-E
3LN01C-TB-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 150MA 3CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock8,100
3LN01C-TB-H
3LN01C-TB-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 150MA 3CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,726
3LN01M-TL-E
3LN01M-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 0.15A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70/MCPH3
  • Package / Case: SC-70, SOT-323
In Stock4,176
3LN01M-TL-H
3LN01M-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 150MA MCP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70/MCPH3
  • Package / Case: SC-70, SOT-323
In Stock4,356
3LN01S-K-TL-E
3LN01S-K-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 0.15A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock2,124
3LN01SS-TL-E
3LN01SS-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 0.15A SSFP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-81 (SSFP)
  • Package / Case: SC-81
In Stock5,526
3LN01SS-TL-H
3LN01SS-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 150MA SMCP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
In Stock6,588