Transistors

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Records 64,903

Page 962/2164

Part Number	Description	In Stock
2SK4043LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock6,012
2SK4065-DL-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,938
2SK4065-DL-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V TO263-2 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,784
2SK4065-DL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,150
2SK4065-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A SMP Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SMP Package / Case: TO-220-3, Short Tab	In Stock7,974
2SK4066-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,256
2SK4066-DL-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,212
2SK4066-DL-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO263-2 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,744
2SK4066-DL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,920
2SK4066-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A SMP Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SMP Package / Case: TO-220-3, Short Tab	In Stock4,248
2SK4085LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock4,752
2SK4085LS-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock5,526
2SK4087LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A TO-220F Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock6,750
2SK4087LS-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock6,282
2SK4088LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock5,202
2SK4088LS-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock5,472
2SK4089LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock6,264
2SK4093TZ-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 1A TO-92 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	In Stock8,802
2SK4094-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO220-3 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock6,192
2SK4098FS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6A TO220F-3FS Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V FET Feature: - Power Dissipation (Max): 2W Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock2,016
2SK4099LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8.5A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock6,390
2SK4099LS-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8.5A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock5,184
2SK4116LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 12A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 33W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock3,564
2SK4117LS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 15A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock7,668
2SK4124 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-3PB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PB Package / Case: TO-3P-3, SC-65-3	In Stock2,376
2SK4124-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	In Stock3,508
2SK4125 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO-3PB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PB Package / Case: TO-3P-3, SC-65-3	In Stock5,706
2SK4125-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	In Stock3,580
2SK4125-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO3P Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	In Stock5,940
2SK4126 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO-3PB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PB Package / Case: TO-3P-3, SC-65-3	In Stock3,618

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