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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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5LN01C-TB-EX
5LN01C-TB-EX

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA 3CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock8,424
5LN01C-TB-H
5LN01C-TB-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock5,778
5LN01M-TL-E
5LN01M-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.1A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
In Stock4,284
5LN01M-TL-H
5LN01M-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA SC59

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
In Stock6,408
5LN01SP
5LN01SP

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.1A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
In Stock3,978
5LN01SP-AC
5LN01SP-AC

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA SPA

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
In Stock3,420
5LN01SS-TL-E
5LN01SS-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA SSFP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: SC-81
In Stock5,760
5LN01SS-TL-H
5LN01SS-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA SSFP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: SC-81
In Stock7,920
5LN01S-TL-E
5LN01S-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 100MA SMCP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
In Stock7,560
5LP01C-TB-E
5LP01C-TB-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock8,586
5LP01C-TB-H
5LP01C-TB-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA CP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock7,794
5LP01M-TL-E
5LP01M-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V .07A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
In Stock6,246
5LP01M-TL-H
5LP01M-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA MCP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
In Stock4,572
5LP01M-TL-HX
5LP01M-TL-HX

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 0.07A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
In Stock6,282
5LP01SP
5LP01SP

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V .07A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
In Stock7,254
5LP01SP-AC
5LP01SP-AC

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V .07A

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
In Stock5,454
5LP01SS-TL-E
5LP01SS-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA SSFP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: SC-81
In Stock5,058
5LP01SS-TL-H
5LP01SS-TL-H

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA SSFP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: SC-81
In Stock6,138
5LP01S-TL-E
5LP01S-TL-E

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 70MA SMCP

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
In Stock2,880
5X49_BG7002B
5X49_BG7002B

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,942
62-0063PBF
62-0063PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 15A 8-SOIC

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock3,762
62-0095PBF
62-0095PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • Manufacturer: Infineon Technologies
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
In Stock4,482
62-0136PBF
62-0136PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 19A 8-SOIC

  • Manufacturer: Infineon Technologies
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
In Stock2,466
62-0203PBF
62-0203PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 16A 8-SO

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 8676pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock4,554
64-0007
64-0007

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 18A TO-220AB

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
In Stock8,982
64-0055PBF
64-0055PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO-220AB

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: -
In Stock7,542
64-2042
64-2042

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 75A TO-262

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
In Stock6,480
64-2092PBF
64-2092PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 75A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,942
64-2096PBF
64-2096PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 160A D2PAK-7

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock5,724
64-2105PBF
64-2105PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 75A TO-262

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
In Stock6,138