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3LN01C-TB-H

3LN01C-TB-H

For Reference Only

Part Number 3LN01C-TB-H
PNEDA Part # 3LN01C-TB-H
Description MOSFET N-CH 30V 150MA 3CP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,726
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

3LN01C-TB-H Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number3LN01C-TB-H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
3LN01C-TB-H, 3LN01C-TB-H Datasheet (Total Pages: 6, Size: 253.25 KB)
PDF3LN01C-TB-E Datasheet Cover
3LN01C-TB-E Datasheet Page 2 3LN01C-TB-E Datasheet Page 3 3LN01C-TB-E Datasheet Page 4 3LN01C-TB-E Datasheet Page 5 3LN01C-TB-E Datasheet Page 6

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3LN01C-TB-H Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs1.58nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds7pF @ 10V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CP
Package / CaseTO-236-3, SC-59, SOT-23-3

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