Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - Special Purpose (162)

Records 64,903

Page 948/2164

Part Number	Description	In Stock
2N6661JTXP02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock7,128
2N6661JTXV02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,420
2N6756 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock3,508
2N6758 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock4,734
2N6760 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock8,784
2N6762 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock8,676
2N6764 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-204AE TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock2,862
2N6764T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 38A TO-204AE Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock6,498
2N6766 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-204AE TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock4,608
2N6766T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-254AA Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock8,442
2N6768 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V TO-204AE TO-3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock2,052
2N6768T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 14A TO-254AA Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock2,772
2N6770 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO-204AE Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock2,052
2N6770T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO-254AA Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock2,178
2N6782 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-205AF Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock6,174
2N6782U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock7,506
2N6784 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-205AF Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock8,442
2N6784U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock7,506
2N6788 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-205AF Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock7,650
2N6788U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock7,200
2N6790 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-205AF Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock4,032
2N6790U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock2,142
2N6796 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-205AF TO-39 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock6,228
2N6796U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock3,150
2N6798 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-205AF TO-39 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock7,218
2N6798U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock3,078
2N6800 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V TO-205AF TO-39 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	In Stock5,256
2N6800U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock3,870
2N6802 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V TO-205AF TO-39 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock7,866
2N6802U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18LCC Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock2,664

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