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2N6661JTXV02

2N6661JTXV02

For Reference Only

Part Number 2N6661JTXV02
PNEDA Part # 2N6661JTXV02
Description MOSFET N-CH 90V 0.86A TO-205
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N6661JTXV02 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part Number2N6661JTXV02
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N6661JTXV02, 2N6661JTXV02 Datasheet (Total Pages: 6, Size: 90.82 KB)
PDF2N6661JTXV02 Datasheet Cover
2N6661JTXV02 Datasheet Page 2 2N6661JTXV02 Datasheet Page 3 2N6661JTXV02 Datasheet Page 4 2N6661JTXV02 Datasheet Page 5 2N6661JTXV02 Datasheet Page 6

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2N6661JTXV02 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)90V
Current - Continuous Drain (Id) @ 25°C860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)725mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AD, TO-39-3 Metal Can

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