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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
VRF191
VRF191

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF N-CH 100V 150W T11

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 100V
  • Current Rating (Amps): 12A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 270V
  • Package / Case: T11
  • Supplier Device Package: T11
In Stock2,232
VRF191MP
VRF191MP

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF N-CH 100V 150W T11

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock4,338
VRF2933
VRF2933

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF PWR N-CH 50V 300W M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating (Amps): 2mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock370
VRF2933FL
VRF2933FL

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF N-CH 170V 30MHZ T2

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating (Amps): 42A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock8,136
VRF2933MP
VRF2933MP

Microsemi

Transistors - FETs, MOSFETs - RF

RF MOSFET N-CHANNEL 50V M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating (Amps): 2mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock5,184
VRF2944
VRF2944

Microsemi

Transistors - FETs, MOSFETs - RF

MOSF RF N CH 170V 50A M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating (Amps): 50A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 400W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock3,024
VRF2944MP
VRF2944MP

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF N-CH 170V 50A M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating (Amps): 50A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 400W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock8,244
VRF3933
VRF3933

Microsemi

Transistors - FETs, MOSFETs - RF

MOSF RF N CH 250V 20A M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 100V
  • Current Rating (Amps): 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 250V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock5,706
VRF3933MP
VRF3933MP

Microsemi

Transistors - FETs, MOSFETs - RF

MOSFET RF N-CH 250V 20A M177

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 28dB
  • Voltage - Test: 100V
  • Current Rating (Amps): 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 350W
  • Voltage - Rated: 250V
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock4,428
XF1001-SC-0G00
XF1001-SC-0G00

M/A-Com Technology Solutions

Transistors - FETs, MOSFETs - RF

TRANS HFET 1W SOT89

  • Manufacturer: M/A-Com Technology Solutions
  • Series: -
  • Transistor Type: HFET
  • Frequency: 6GHz
  • Gain: 15.5dB
  • Voltage - Test: 8V
  • Current Rating (Amps): 450mA
  • Noise Figure: 4.5dB
  • Current - Test: 300mA
  • Power - Output: -
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
In Stock6,354
XF1001-SC-0G0T
XF1001-SC-0G0T

M/A-Com Technology Solutions

Transistors - FETs, MOSFETs - RF

TRANS HFET 1W SOT89

  • Manufacturer: M/A-Com Technology Solutions
  • Series: -
  • Transistor Type: HFET
  • Frequency: 6GHz
  • Gain: 15.5dB
  • Voltage - Test: 8V
  • Current Rating (Amps): 450mA
  • Noise Figure: 4.5dB
  • Current - Test: 300mA
  • Power - Output: -
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
In Stock3,598
1HN04CH-TL-W
1HN04CH-TL-W

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 0.27A SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,276
1HP04CH-TL-W
1HP04CH-TL-W

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 0.17A SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock24,228
2N6660
2N6660

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock5,688
2N6660
2N6660

Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.41A TO39-3

  • Manufacturer: Microchip Technology
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock6,516
2N6660-2
2N6660-2

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock7,380
2N6660-E3
2N6660-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 990MA TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock7,308
2N6660JTVP02
2N6660JTVP02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,672
2N6660JTX02
2N6660JTX02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,078
2N6660JTXL02
2N6660JTXL02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,420
2N6660JTXP02
2N6660JTXP02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock7,128
2N6660JTXV02
2N6660JTXV02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.99A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AD (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock4,212
2N6661
2N6661

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock4,590
2N6661
2N6661

Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 350MA 3TO-39

  • Manufacturer: Microchip Technology
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock11,292
2N6661-2
2N6661-2

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,798
2N6661-E3
2N6661-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,258
2N6661JAN02
2N6661JAN02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock5,364
2N6661JTVP02
2N6661JTVP02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock6,534
2N6661JTX02
2N6661JTX02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock4,770
2N6661JTXL02
2N6661JTXL02

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 0.86A TO-205

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
In Stock3,042