Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
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Transistors - Special Purpose (162)

Records 64,903

Page 947/2164

Part Number	Description	In Stock
VRF191 Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF N-CH 100V 150W T11 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 22dB Voltage - Test: 100V Current Rating (Amps): 12A Noise Figure: - Current - Test: 250mA Power - Output: 150W Voltage - Rated: 270V Package / Case: T11 Supplier Device Package: T11	In Stock2,232
VRF191MP Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF N-CH 100V 150W T11 Manufacturer: Microsemi Corporation Series: - Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating (Amps): - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	In Stock4,338
VRF2933 Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF PWR N-CH 50V 300W M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 150MHz Gain: 25dB Voltage - Test: 50V Current Rating (Amps): 2mA Noise Figure: - Current - Test: 250mA Power - Output: 300W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	In Stock370
VRF2933FL Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF N-CH 170V 30MHZ T2 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 22dB Voltage - Test: 50V Current Rating (Amps): 42A Noise Figure: - Current - Test: 250mA Power - Output: 300W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	In Stock8,136
VRF2933MP Microsemi	Transistors - FETs, MOSFETs - RF RF MOSFET N-CHANNEL 50V M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 150MHz Gain: 25dB Voltage - Test: 50V Current Rating (Amps): 2mA Noise Figure: - Current - Test: 250mA Power - Output: 300W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	In Stock5,184
VRF2944 Microsemi	Transistors - FETs, MOSFETs - RF MOSF RF N CH 170V 50A M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 22dB Voltage - Test: 50V Current Rating (Amps): 50A Noise Figure: - Current - Test: 250mA Power - Output: 400W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	In Stock3,024
VRF2944MP Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF N-CH 170V 50A M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 25dB Voltage - Test: 50V Current Rating (Amps): 50A Noise Figure: - Current - Test: 250mA Power - Output: 400W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	In Stock8,244
VRF3933 Microsemi	Transistors - FETs, MOSFETs - RF MOSF RF N CH 250V 20A M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 22dB Voltage - Test: 100V Current Rating (Amps): 20A Noise Figure: - Current - Test: 250mA Power - Output: 300W Voltage - Rated: 250V Package / Case: M177 Supplier Device Package: M177	In Stock5,706
VRF3933MP Microsemi	Transistors - FETs, MOSFETs - RF MOSFET RF N-CH 250V 20A M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: N-Channel Frequency: 30MHz Gain: 28dB Voltage - Test: 100V Current Rating (Amps): 20A Noise Figure: - Current - Test: 250mA Power - Output: 350W Voltage - Rated: 250V Package / Case: M177 Supplier Device Package: M177	In Stock4,428
XF1001-SC-0G00 M/A-Com Technology Solutions	Transistors - FETs, MOSFETs - RF TRANS HFET 1W SOT89 Manufacturer: M/A-Com Technology Solutions Series: - Transistor Type: HFET Frequency: 6GHz Gain: 15.5dB Voltage - Test: 8V Current Rating (Amps): 450mA Noise Figure: 4.5dB Current - Test: 300mA Power - Output: - Voltage - Rated: 9V Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock6,354
XF1001-SC-0G0T M/A-Com Technology Solutions	Transistors - FETs, MOSFETs - RF TRANS HFET 1W SOT89 Manufacturer: M/A-Com Technology Solutions Series: - Transistor Type: HFET Frequency: 6GHz Gain: 15.5dB Voltage - Test: 8V Current Rating (Amps): 450mA Noise Figure: 4.5dB Current - Test: 300mA Power - Output: - Voltage - Rated: 9V Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock3,598
1HN04CH-TL-W ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 0.27A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,276
1HP04CH-TL-W ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.17A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock24,228
2N6660 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock5,688
2N6660 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.41A TO39-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock6,516
2N6660-2 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock7,380
2N6660-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 990MA TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock7,308
2N6660JTVP02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,672
2N6660JTX02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,078
2N6660JTXL02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,420
2N6660JTXP02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock7,128
2N6660JTXV02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AD (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock4,212
2N6661 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock4,590
2N6661 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 350MA 3TO-39 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock11,292
2N6661-2 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,798
2N6661-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,258
2N6661JAN02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock5,364
2N6661JTVP02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock6,534
2N6661JTX02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock4,770
2N6661JTXL02 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	In Stock3,042

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