Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
2N7002K,215 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 340MA SOT23 Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 830mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,122
2N7002K-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock41,112,558
2N7002KA-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-23 PACKAGE Manufacturer: Micro Commercial Co Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock269,946
2N7002K-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,638,744
2N7002KT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 320MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock602,160
2N7002K-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,058,552
2N7002KT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 320MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,236
2N7002KT7G ON Semiconductor	Transistors - FETs, MOSFETs - Single NFET SOT23 60V 115MA 7MO Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,300
2N7002K-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 340MA SOT-23-3 Manufacturer: Micro Commercial Co Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock821,454
2N7002KW ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.31A SOT323 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 (SOT323) Package / Case: SC-70, SOT-323	In Stock388,284
2N7002KW-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-323 PACKAG Manufacturer: Micro Commercial Co Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 200mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock156,894
2N7002KX-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23-3 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,390
2N7002L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock682,938
2N7002L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,614
2N7002_L99Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 115MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,924
2N7002LT1 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,372
2N7002LT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock13,917,288
2N7002LT1H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT-23 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,348
2N7002LT3 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,950
2N7002LT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock1,659,312
2N7002LT7G ON Semiconductor	Transistors - FETs, MOSFETs - Single NFET SOT23 60V 115MA 7.5O Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,068
2N7002LT7H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT-23 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,654
2N7002MTF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,722
2N7002_NB9G002 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 115MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,200
2N7002P,215 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.36A SOT-23 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,756,614
2N7002P,235 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.36A SOT-23 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,747,976
2N7002PM,315 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.3A SOT-883 Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	In Stock6,912
2N7002PT,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.31A SOT-416 Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	In Stock8,694
2N7002PW,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.31A SOT323 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V FET Feature: - Power Dissipation (Max): 260mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	In Stock742,032
2N7002Q-7-F Diodes Incorporated	Transistors - FETs, MOSFETs - Single 2N7002 FAMILY SOT23 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.233nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,776

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